Search results for "Random access memory"

showing 10 items of 11 documents

Parallelizing Epistasis Detection in GWAS on FPGA and GPU-Accelerated Computing Systems

2015

This is a post-peer-review, pre-copyedit version of an article published in IEEE - ACM Transactions on Computational Biology and Bioinformatics. The final authenticated version is available online at: http://dx.doi.org/10.1109/TCBB.2015.2389958 [Abstract] High-throughput genotyping technologies (such as SNP-arrays) allow the rapid collection of up to a few million genetic markers of an individual. Detecting epistasis (based on 2-SNP interactions) in Genome-Wide Association Studies is an important but time consuming operation since statistical computations have to be performed for each pair of measured markers. Computational methods to detect epistasis therefore suffer from prohibitively lon…

Computer scienceBioinformaticsDNA Mutational AnalysisGenome-wide association studyParallel computingPolymorphism Single NucleotideSensitivity and SpecificityComputational biologyComputer GraphicsGeneticsComputer architectureField-programmable gate arrayRandom access memoryApplied MathematicsChromosome MappingHigh-Throughput Nucleotide SequencingReproducibility of ResultsField programmable gate arraysEpistasis GeneticSignal Processing Computer-AssistedEquipment DesignRandom access memoryComputing systemsReconfigurable computingEquipment Failure AnalysisTask (computing)EpistasisHost (network)Graphics processing unitsGenome-Wide Association StudyBiotechnology
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Heavy-Ion Radiation Impact on a 4Mb FRAM under Different Test Conditions

2015

The impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. The influence of different test modes (static and dynamic) on this memory is investigated. Static test results show that the memory is prone to temporary effects occurring in the peripheral circuitry. Dynamic tests results show a high sensitivity of this memory to heavy-ions.

Ionizing radiation[PHYS]Physics [physics]010302 applied physicsRandom access memoryMaterials scienceHeavy ion radiationta114ta213010308 nuclear & particles physics01 natural sciencestest conditions[SPI.TRON]Engineering Sciences [physics]/ElectronicsNon-volatile memoryMultiple Cell Upset (MCU)FRAM0103 physical sciencesStatic testingElectronic engineeringSensitivity (control systems)radiation testing130nmSingle Event Upset (SEU)static and dynamic mode testingSimulation
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Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory

2018

International audience; This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. The underlying mechanisms are discussed.

Nuclear and High Energy PhysicsComputer sciencekäyttömuistit02 engineering and technologysingle-event effect01 natural sciencesMemory arrayElectronic mailX-ray0103 physical sciencesElectronic engineering[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/MicroelectronicsElectrical and Electronic Engineeringstatic testComputingMilieux_MISCELLANEOUSdynamic testEvent (probability theory)Random access memoryta114ta213010308 nuclear & particles physicsbusiness.industrySEFImuistit (tietotekniikka)021001 nanoscience & nanotechnologyFerroelectricityheavy ionsingle-event upsetNon-volatile memoryFRAMsäteilyfysiikkaNuclear Energy and EngineeringSingle event upsetPhotonics0210 nano-technologybusinessIEEE Transactions on Nuclear Science
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Methodologies for the Statistical Analysis of Memory Response to Radiation

2016

International audience; Methodologies are proposed for in-depth statistical analysis of Single Event Upset data. The motivation for using these methodologies is to obtain precise information on the intrinsic defects and weaknesses of the tested devices, and to gain insight on their failure mechanisms, at no additional cost. The case study is a 65 nm SRAM irradiated with neutrons, protons and heavy ions. This publication is an extended version of a previous study.

Nuclear and High Energy PhysicsEngineeringHardware_PERFORMANCEANDRELIABILITYRadiation[PHYS.NEXP]Physics [physics]/Nuclear Experiment [nucl-ex]01 natural sciencesstatistical analysis0103 physical sciencesStatic testingElectronic engineeringmemory responseStatistical analysisSensitivity (control systems)Static random-access memoryElectrical and Electronic Engineeringstatic testCluster of bit-flipsdynamic test010302 applied physicsSingle event upset SEURandom access memoryta114ta213010308 nuclear & particles physicsbusiness.industrymultiple cell upset (MCU)säteilySRAMReliability engineeringradiationNuclear Energy and EngineeringSingle event upsetradiation effectsbusiness[MATH.MATH-NA]Mathematics [math]/Numerical Analysis [math.NA]Dynamic testing
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Proton Direct Ionization Upsets at Tens of MeV

2023

Experimental monoenergetic proton single-event upset (SEU) cross sections of a 65-nm low core-voltage static random access memory (SRAM) were found to be exceptionally high not only at low energies ($ 3 MeV and extending up to tens of MeV. The SEU cross Section from 20-MeV protons exceeds the 200-MeV proton SEU cross Section by almost a factor of 3. Similarly, monoenergetic neutron cross sections at 14 MeV are about a factor of 3 lower than the 20-MeV proton cross section. Because of Monte Carlo (MC) simulations, it was determined that this strong enhancement is due to the proton direct ionization process as opposed to the elastic and inelastic scattering processes that dominate the SEU res…

Nuclear and High Energy Physicsprotonitprotonsionitionisoiva säteilyscatteringneutronsenergiansiirtoMonte-Carlo simulationsneutronitmuistit (tietotekniikka)proton direct ionizationMonte Carlo -menetelmätNuclear Energy and Engineeringrandom access memorytrajectorydelta-raysNuclear Physics - Experimentsingle event upsetsElectrical and Electronic Engineeringliike-energia
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The Pion Single-Event Effect Resonance and its Impact in an Accelerator Environment

2020

International audience; The pion resonance in the nuclear reaction cross section is seen to have a direct impact on the single-event effect (SEE) cross section of modern electronic devices. This was experimentally observed for single-event upsets and single-event latchup. Rectangular parallelepiped (RPP) models built to fit proton data confirm the existence of the pion SEE cross-section resonance. The impact on current radiation hardness assurance (RHA) soft error rate (SER) predictions is, however, minimal for the accelerator environment since this is dominated by high neutron fluxes. The resonance is not seen to have a major impact on the high-energy hadron equivalence approximation estab…

Nuclear reactionProtonNuclear Theoryresonance: effectSingle event upsets01 natural sciences7. Clean energyResonance (particle physics)nuclear reactionelektroniikkakomponentitradiation hardness assurance (RHA)Detectors and Experimental TechniquesNuclear Experimentradiation: damagePhysicsLarge Hadron Colliderprotonscross sectionMesonsneutronitRandom access memorySEELarge Hadron Colliderpionsn: fluxNuclear and High Energy PhysicsprotonitMesonaccelerator[PHYS.PHYS.PHYS-ACC-PH]Physics [physics]/Physics [physics]/Accelerator Physics [physics.acc-ph]RHAsoft error ratesoft error rate (SER)hiukkaskiihdyttimetNuclear physicsFLUKACross section (physics)hiukkasetPion0103 physical sciencesNeutron[PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det]Electrical and Electronic Engineeringpi: interactionsingle-event effect (SEE)Neutrons010308 nuclear & particles physicsneutronsAccelerators and Storage RingsParticle beamsNuclear Energy and EngineeringsäteilyfysiikkahadronIEEE Transactions on Nuclear Science
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A Model for a Data Acquisition Solution for a Medium Size Accelerator Laboratory

2005

Pipeline transportRandom access memoryData acquisitionOptical controlComputer sciencebusiness.industryControl systemOptical performance monitoringOptical filterbusinessComputer hardwareSeventh Conference Real Time '91 on Computer Applications in Nuclear, Particle and Plasma Physics Conference Record
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First Experiences on an Accurate SPH Method on GPUs

2017

It is well known that the standard formulation of the Smoothed Particle Hydrodynamics is usually poor when scattered data distribution is considered or when the approximation near the boundary occurs. Moreover, the method is computational demanding when a high number of data sites and evaluation points are employed. In this paper an enhanced version of the method is proposed improving the accuracy and the efficiency by using a HPC environment. Our implementation exploits the processing power of GPUs for the basic computational kernel resolution. The performance gain demonstrates the method to be accurate and suitable to deal with large sets of data.

SpeedupExploitGPUsComputer scienceComputer Networks and CommunicationsGPUSmoothed Particle Hydrodynamics method010103 numerical & computational mathematics01 natural sciencesComputational scienceSmoothed-particle hydrodynamicsInstruction setSettore MAT/08 - Analisi NumericaArtificial IntelligenceAccuracy; Approximation; GPUs; Kernel function; Smoothed particle hydrodynamics method; Speed-Up; Artificial Intelligence; Computer Networks and Communications; 1707; Signal Processing0101 mathematicsApproximationAccuracy1707Random access memoryLinear systemKernel functionSpeed-Up010101 applied mathematicsKernel (statistics)Signal Processing
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The 2014 Magnetism Roadmap

2014

Magnetism is a very fascinating and dynamic field. Especially in the last 30 years it has experienced many major advances in the full range from novel fundamental phenomena to new products. Applications such as hard disk drives and magnetic sensors are part of our daily life, and new applications, such as in non-volatile computer random access memory, are expected to surface shortly. Thus it is timely for describing the current status, and current and future challenges in the form of a Roadmap article. This 2014 Magnetism Roadmap provides a view on several selected, currently very active innovative developments. It consists of 12 sections, each written by an expert in the field and addressi…

[PHYS]Physics [physics]Dynamic fieldRandom access memoryCondensed Matter - Materials ScienceMaterials scienceAcoustics and UltrasonicsScope (project management)Condensed Matter - Mesoscale and Nanoscale PhysicsMagnetismNew materialsMaterials Science (cond-mat.mtrl-sci)FOS: Physical sciencesCondensed Matter PhysicsField (computer science)Surfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsMesoscale and Nanoscale Physics (cond-mat.mes-hall)Systems engineering
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Proton Direct Ionization in Sub-Micron Technologies : Test Methodologies and Modelling

2023

Two different low energy proton (LEP) test methods, one with quasi-monoenergetic and the other with very wide proton beam energy spectra, have been studied. The two test methodologies have been applied to devices that were suggested from prior heavy-ion tests to be sensitive to proton direct ionization (PDI). The advantages and disadvantages of the two test methods are discussed. The test method using quasi-monoenergetic beams requires device preparation and high energy resolution beams, but delivers results that can be interpreted directly and can be used in various soft error rate (SER) calculation methods. The other method, using a heavily degraded high energy proton beam, requires littl…

protonitprotonstestausmenetelmätsäteilyfysiikkalatticesrandom access memoryparticle beamsionisoiva säteilykäyttömuistitradiation effectssensitivityperformance evaluationelektroniikkakomponentit
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